CVD Films

Silicon Dioxide and Doped Glasses

Film Properties and Applications
Silane/Oxygen Thermal CVD
TEOS/Oxygen Thermal CVD
TEOS/Ozone Thermal CVD
Silane/N2O PECVD
TEOS/O2 PECVD
High-Density Plasma CVD

Silicon Nitride

Film Properties and Applications
Silicon Nitride Thermal CVD
Silicon Nitride Plasma CVD


Low-K and High-K Dielectrics

Fluorine and Methyl in Silica
Tantalum Oxide
Barium Strontium Titanate


Metals

Tungsten and Tungsten Silicide
Titanium Nitride and Barriers

Fluorine and Methyl in Silica

OK, this page is mostly a placeholder. I need to write a real discussion. But it’s worth being aware that replacing some of the Si-O-Si bonds in silicon dioxide with fluorine or carbon reduces the dielectric constant of the material, at the cost of degraded mechanical properties. Fluorinated silica is still used in many of the older CMOS processes (e.g. 180 nm). Silica with methyl groups is one of the approaches used in more modern processes to achieving low dielectric constant in the intermetal dielectrics. And feel free to bug me about finishing this page! (March 2016)


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Book version of the CVD Tutorial